Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer

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Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer

To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/...

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ژورنال

عنوان ژورنال: Nanoscale Research Letters

سال: 2013

ISSN: 1556-276X

DOI: 10.1186/1556-276x-8-523